| 摘要 |
The present invention system and method facilitates efficient material deposition and wafer planarization during IC wafer fabrication. The present invention is particularly useful in facilitating efficient copper deposition and manufacturing of interconnections between components of an IC. A deposition polishing system and method of the present invention performs copper deposition and polishing concurrently. One embodiment of a deposition polishing system comprises a wafer holder, polishing pad component, and CMP plating bath. The CMP plating bath is a container for holding solutions utilized in plating processes (e.g., electroplating, electroless plating, etc.) to deposit metallic material (e.g., copper) on a wafer. A wafer is placed in the plating bath containing plating solution and while metallic material is being deposited on the wafer the polishing pad component impedes deposition of material on portions of the wafer surface while facilitating deposition in other desired locations of the wafer surface (e.g., an interconnection trench). The polishing pad component also facilitates transportation of the plating solution to the wafer and the motion of the polishing pad component agitates the plating solution.
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