CZOCHRALSKI PULLER USING MAGNETIC FIELD AND METHOD FOR GROWING SINGLE CRYSTAL INGOT USING THE SAME

摘要

PURPOSE: A Czochralski puller using a magnetic field and a method for growing a single crystal ingot using the same are provided which improve pure margin for pure silicon and increase a growth rate of the pure silicon by controlling the intensity and position of a cusp magnetic field so as to minimize a temperature fluctuation accompanying convection current of a melt. CONSTITUTION: The Czochralski puller(300) using a magnetic field comprises a crucible(110) which can be rotated, descended and ascended, and which contains a melt(330); a seed crystal pulling part which can be rotated, descended and ascended, and which can grow a single crystal ingot(340) as vertically pulling up the seed crystal contacted with the melt after contacting a seed crystal(140) adhered to the lower part of the seed crystal pulling part with the melt that is stored in the crucible; and magnetic field generation means(210,220) which are horizontally positioned with spaced apart from the outer side of the crucible in a certain distance, and generate magnetic fields impressed perpendicularly to the melt inside the crucible. The method for growing a single crystal ingot comprises the steps of setting vertical positions of magnetic field generation means for the crucible so that the magnetic fields that are generated by the magnetic field generation means are impressed perpendicularly to the melt stored in the crucible; and growing a single crystal ingot as vertically pulling up a seed crystal contacted with the melt after contacting the seed crystal with the melt that is stored in the crucible by lowering a seed crystal pulling part to the lower part of which the seed crystal is adhered.