| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a processing method of a susceptor capable of removing a film adhered to the susceptor during SiC epitaxial growth process, and to provide a processing method of a semiconductor manufacturing apparatus. <P>SOLUTION: A substrate 106 is mounted on a susceptor 207, and an Si film 301 is grown epitaxially on the substrate 106. A semiconductor substrate 206 is then mounted on the susceptor 207 in place of the substrate 106, and an SiC film 302 is grown epitaxially on the semiconductor substrate 206. Subsequently, HCI gas is made to flow downward from above the susceptor 207 while heating the susceptor 207, from which the semiconductor substrate 206 is removed, to a predetermined temperature and rotating the susceptor 207 thus removing the Si film 301 and SiC film 302 on the susceptor 207. Preferably, ClF<SB POS="POST">3</SB>gas is further made to flow downward from above the susceptor 207. <P>COPYRIGHT: (C)2012,JPO&INPIT |
