| 摘要 |
<p>Disclosed is a chemo-mechanical polishing liquid comprising water, an abrasive filler, a compound capable of etching tungsten, a tungsten-etching inhibitor, and a regulator for a substrate profile, wherein the tungsten-etching inhibitor is an amide comprising a double bond. The said polishing liquid possesses a very high tungsten polishing rate and, at the same time, a very low tungsten static etch rate.</p> |
