| 摘要 |
<p>#CMT# #/CMT# Copolythiophene containing thiophene (I) integrated in the polymer chain, is new. #CMT# : #/CMT# Copolythiophene containing thiophene of formula (I) integrated in the polymer chain, is new. R 1>an oxygen moiety of formula [(-CH 2) n-O] m-R 2>; R 2>1-18C alkyl; n : 1-6; and m : 1-20, preferably 1-9. An independent claim is also included for the electrical component comprising a semiconductor made from a copolythiophene. #CMT#[Image]#/CMT# #CMT#USE : #/CMT# The copolythiophene is useful in electrical components in the form of a field effect transistor, a diode, a photovoltaic cell, an integrated circuit, a capacitor or a sensor (claimed). #CMT#ADVANTAGE : #/CMT# The copolythiophene provides a semi conductive polymer, which exhibits high charge carrier mobility and good stability during processing under normal atmospheric conditions. #CMT#ORGANIC CHEMISTRY : #/CMT# Preparation: No preparation method is given. Preferred Components: The copolythiophene additionally contains thiophene of formula (III). The units (I) and (III) can be arranged in the copolymer as alternating units or block-wise. The molar ratio of the units (I) to the units (III) in the copolymer is 0.01-0.99, preferably 0.4-0.6. The units (I) and (III) in the copolymer are at least partially connected with head to tail, preferably with a content of 70-99.9%, preferably 98-99.5%. The copolythiophene has a number average molar mass of 500-500000 g/mole, preferably 5000-50000 g/mole. The total copolymer comprises 8-2500, preferably 50-250 monomer units. The component comprises (a) a substrate including glass, silica, polymer films, preferably polyimide, polyethylene and/or polyethylene terephthalate, (b) drain-source electrodes arranged on the substrate, where the electrodes are preferably formed from conducting polymers e.g. polyaniline and/or poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate); metals, preferably gold, copper and/or aluminum; and/or conductive metal oxides, preferably indium tin oxide, (c) a semiconductor layer made of copolythiophene deposited on the electrodes, (d) a layer of an electrical insulator layer deposited on the semiconductor layer, preferably a non-conductive polymer e.g. poly(methylmethacrylate), polystyrene, polyester, polyvinyl phenol and/or polyhydroxy styrene, and (e) a gate electrode layer applied on the insulator layer, preferably formed from conducting polymers e.g. polyaniline and/or poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate); metals, preferably gold, copper and/or aluminum, and/or conductive metal oxides, preferably indium tin oxide. R 3>1-36C, preferably 6-15C alkyl. #CMT#[Image]#/CMT# #CMT#EXAMPLE : #/CMT# 3-Thiophenethanol was etherified with (2-bromoethyl)methylether. The obtained product was purified by column chromatography with hexane/ethyl acetate in a ratio of 3:1. Then the product 3-(3,6-dioxaheptyl)thiophene was brominated with N-bromosuccinimide in tetrahydrofuran at room temperature to obtain 2,5-dibromo-3-(3,6-dioxaheptyl)thiophene. 2,5-Dibromo-3-(3,6-dioxaheptyl) thiophene (1.40 g) and 2,5-dibromo-3-hexylthiophene (1.33 g) were polymerized together in 60 ml of tetrahydrofuran (THF). Then to the polymerized solution 3M methylmagnesium bromide (2.8 ml) in THF was added drop wise at room temperature. The reaction solution was heated to reflux for an hour and 43 mg of nickel-catalyst nickel(diphenylphosphinoethane)chloride in tetrahydrofuran was added. Then the reaction solution was stirred for 24 hours at 80[deg] C. Then thienyl zinc bromide (0.386 ml) and further nickel-catalyst (1.3 mg) were added, to perform an end-capping. The entire mixture was refluxed for 5 hours. The reaction mixture was cooled to room temperature and the polymer in a mixture of methanol and 2N hydrochloric acid (3:1) was precipitated and removed.</p> |
