| 摘要 |
<P>PROBLEM TO BE SOLVED: To shorten a recovery period with respect to data corruption due to static electricity or the like, which is generated during a data retention period or a data read period of a buffer memory. <P>SOLUTION: A memory device includes a buffer memory 210 for storing data sent from an upper device, a parity generating circuit 228 for generating first parity data and second parity data that is related to the first parity data according to a predetermined rule based on a written data when the data is written on the buffer memory 210, a parity comparison part 234 for comparing the first parity data with the second parity data during a retention period in which the data written on the buffer memory 210 is retained, and an output part 216 for outputting a data retransmission request to the upper device when the relation by the predetermined rule is invalid as a result of the comparison by the parity comparison part 234. <P>COPYRIGHT: (C)2012,JPO&INPIT |
