METHOD OF MANUFACTURING TRENCH TYPE METAL OXIDE FILM SEMICONDUCTOR FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a trench type metal oxide film semiconductor field effect transistor (MOSFET) upward.

SOLUTION: A trench bottom doping (TBD) process and/or a trench bottom oxide (TBO) process may be performed after forming a substrate and a first epitaxial (epi) layer. In order to improve the quality and purity of a second epi layer which is formed in a merged epitaxial lateral overgrowth (MELO) step, sealing by poly may be performed after formation of the TBO layer and before the MELO step. Plasma dry etching using an endpoint mode may be performed according to the position of the TBO layer in order to improve uniformity in the depth of the trench.

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