发明名称 |
NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER |
摘要 |
A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements. |
申请公布号 |
US2012037885(A1) |
申请公布日期 |
2012.02.16 |
申请号 |
US201013264833 |
申请日期 |
2010.04.19 |
申请人 |
SCHARDT CRAIG R.;LEATHERDALE CATHERINE A.;3M INNOVATIVE PROPERTIES COMPANY |
发明人 |
SCHARDT CRAIG R.;LEATHERDALE CATHERINE A. |
分类号 |
H01L33/04 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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