发明名称 |
ONE-MASK PHASE CHANGE MEMORY PROCESS INTEGRATION |
摘要 |
An example embodiment disclosed is a method for fabricating a phase change memory cell. The method includes forming a non-sublithographic via within an insulating substrate. The insulating substrate is embedded on the same layer as a first metalization layer (Metal 1) of a semiconductor wafer, and includes a bottom and a sidewall. A sublithographic aperture is formed through the bottom of the non-sublithographic via and extends to a buried conductive material. The sublithographic aperture is filled with a conductive non-phase change material. Furthermore, phase change material is deposited within the non-sublithographic via. |
申请公布号 |
US2012037877(A1) |
申请公布日期 |
2012.02.16 |
申请号 |
US20100855079 |
申请日期 |
2010.08.12 |
申请人 |
BREITWISCH MATTHEW J.;JOSEPH ERIC A.;LAM CHUNG H.;LUNG HSIANG-LAN;MACRONIX INTERNATIONAL CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BREITWISCH MATTHEW J.;JOSEPH ERIC A.;LAM CHUNG H.;LUNG HSIANG-LAN |
分类号 |
H01L45/00;H01L21/02;H01L29/40 |
主分类号 |
H01L45/00 |
代理机构 |
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地址 |
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