| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problems of undesirable luminous efficiency in the yellow-green light frequency of a light-emitting diode and deterioration in luminous efficiency of the light-emitting diode. <P>SOLUTION: A group III nitride light-emitting diode mainly comprises: a plurality of n-type gallium nitride nanorods; a first electrode having an n-type gallium nitride nanorod array which comes into ohmic contact therewith; one or plural of indium gallium nitride nanodisks installed on respective n-type gallium nitride nanorods; a p-type gallium nitride nanorod array having a plurality of p-type gallium nitride nanorods where each p-type gallium nitride nanorod corresponds to one n-type gallium nitride nanorod, and installed above the indium gallium nitride nanodisk which is above each corresponding n-type gallium nitride nanorod; and a second electrode which comes into ohmic contact with the p-type gallium nitride nanorod array. <P>COPYRIGHT: (C)2012,JPO&INPIT |
