| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile memory device, a programming method thereof, and a memory system including the same. <P>SOLUTION: A nonvolatile memory device comprises: bit lines connected to cell strings; page buffers which are connected to the bit lines, and which establish approximate target bit line forcing voltage levels for the bit lines; and bit line forcing voltage clamp circuits which are connected between the bit lines and the page buffers, and which make a precise adjustment to the established approximate target bit line forcing voltage levels. <P>COPYRIGHT: (C)2012,JPO&INPIT |
