| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor manufacturing method that reduces unevenness between adhesive film thicknesses when an insulating film formed in a transfer mold is transferred to an adhesive film formed on a substrate. <P>SOLUTION: A thin film transistor manufacturing method comprises: a semiconductor film formation step S11 of forming a semiconductor film in a transfer mold in which an irregular pattern is formed; an insulating film formation step S12 of forming an insulating film in the transfer mold in which the semiconductor film is formed; an adhesive film formation step S02 of forming an adhesive film on an electrode formed in advance on the substrate; a curing step S03 of curing the adhesive film; and a transfer step S21 of transferring the insulating film and semiconductor film on the electrode via the cured adhesive film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
