SEMICONDUCTOR LASER DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain larger output and high reliability in a semiconductor laser device in which light absorption on an end surface is eliminated. SOLUTION: On and under an I-type In0.13Ga0.87As0.75P0.25 quantum well active layer 5, I-type In0.4Ga0.6P tensile strain barrier layers 4, 6 are formed. A P-type GaAs contact layer 9 in the vicinity of a resonator end surface is eliminated. An insulating film 12 is formed on an upper surface in a region except a current injection region. A P electrode 13 is formed in a region except the vicinity of both end surfaces.