Method of manufacturing a semiconductor component

摘要

A method of manufacturing a semiconductor component includes forming an electrically insulative layer (220) over a semiconductor substrate where a first portion of the electrically insulative layer is located over a first region (560) of the semiconductor substrate and where a second portion of the first layer is located over a second region (550) of the semiconductor substrate. An isolation region (610) is formed in the semiconductor substrate between the first and second regions of the semiconductor substrate. After forming the isolation region, the second portion of the first layer is removed, and, after removing the second potion of the first layer, an epitaxial layer (630) is grown over the second region of the semiconductor substrate.