发明名称 SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a rear irradiation type solid-state imaging device which has improved condensing characteristics and in which optical noise such as flares or smears is suppressed, a method for manufacturing the same, and a solid-state imaging apparatus and an imaging apparatus using this solid-state imaging device. <P>SOLUTION: In a device isolation region of a semiconductor substrate, first grooves 61 each having a line width of 100 to 300 nm are formed on the rear surface side of the semiconductor substrate. A silicon dioxide 63 is embedded in the first grooves 61 via a hafnium oxide film 62. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012033583(A) 申请公布日期 2012.02.16
申请号 JP20100169911 申请日期 2010.07.29
申请人 SONY CORP 发明人 KAWASHIMA ATSUSHI;HIRAMATSU KATSUNORI;MIYOSHI YASUSHI
分类号 H01L27/146;H01L27/14;H04N5/359;H04N5/369 主分类号 H01L27/146
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