发明名称 |
SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a rear irradiation type solid-state imaging device which has improved condensing characteristics and in which optical noise such as flares or smears is suppressed, a method for manufacturing the same, and a solid-state imaging apparatus and an imaging apparatus using this solid-state imaging device. <P>SOLUTION: In a device isolation region of a semiconductor substrate, first grooves 61 each having a line width of 100 to 300 nm are formed on the rear surface side of the semiconductor substrate. A silicon dioxide 63 is embedded in the first grooves 61 via a hafnium oxide film 62. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012033583(A) |
申请公布日期 |
2012.02.16 |
申请号 |
JP20100169911 |
申请日期 |
2010.07.29 |
申请人 |
SONY CORP |
发明人 |
KAWASHIMA ATSUSHI;HIRAMATSU KATSUNORI;MIYOSHI YASUSHI |
分类号 |
H01L27/146;H01L27/14;H04N5/359;H04N5/369 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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