| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device in which a photo detector can correctly detect laser beam strength of a semiconductor laser element. <P>SOLUTION: A three-wavelength semiconductor laser device 100 comprises a sub-mount 50 provided with pad electrodes 51 to 54 respectively having wire bond parts 51a to 54a on top faces, a blue-violet semiconductor laser element 20, a red semiconductor laser element 30, an infrared semiconductor laser element 35 and a PD 60. The wire bond part 51a is disposed outside (B2 side) of the blue-violet semiconductor laser element 20 and before (A1 side) the PD 60 and the wire bond part 52a is disposed on the B2 side of the PD 60 and behind (A2 side) the wire bond part 51a. The wire bond part 53a is disposed outside (B1 side) of the infrared semiconductor laser element 35 and before (A1 side) the PD 60, and the wire bond part 54a is disposed on the B1 side of the PD 60 abd behind the wire bond part 53a. <P>COPYRIGHT: (C)2012,JPO&INPIT |
