| 发明名称 |
SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a semiconductor device excellent in electric characteristics with a high yield. <P>SOLUTION: At least one of a groove and a contact hole that reaches a semiconductor region or conductive region is formed on an insulating film that covers the semiconductor region or conductive region, and a first conductive film is formed on at least one of the groove and contact hole. Part or all of the first conductive film is fluidized by exposing the first conductive film to a plasma generated from a mixed gas of an oxidizing gas and a halogen-based gas and then to an atmosphere containing water, and a second conductive film is formed on the first conductive film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012033901(A) |
申请公布日期 |
2012.02.16 |
| 申请号 |
JP20110141408 |
申请日期 |
2011.06.27 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TANAKA TETSUHIRO;ENDO YUTA |
| 分类号 |
H01L23/52;H01L21/28;H01L21/3205;H01L21/336;H01L21/768;H01L29/786 |
主分类号 |
H01L23/52 |
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