| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing solution capable of accelerating a polishing speed and selectively suppressing polishing of a layer containing polysilicon or modified polysilicon in chemical mechanical polishing in manufacturing of a semiconductor integrated circuit, and a polishing method using it. <P>SOLUTION: The polishing liquid is used in chemical mechanical polishing, and contains respective components indicated by the following (1) and (2): (1) colloidal silica particles; and (2) at least one kind of phosphate compounds selected from among phosphoric acid, pyrophosphoric acid and polyphosphoric acid. The pH is 1.5 to 5.0, and where the polishing speed of a first layer is RR(p-Si) and the polishing speed of a second layer is RR(other), the polishing solution is capable of polishing a body to be polished at a ratio indicated by RR(other)/RR(p-Si) in a range from 1.5 to 200. <P>COPYRIGHT: (C)2012,JPO&INPIT |
