| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical liquid for forming a protective film for improving a cleaning process, which easily induces pattern collapse, of a wafer (a metal system wafer) having an uneven pattern on its surface and having at least one kind of elements chosen from a group consisting of titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a recessed part surface of the uneven pattern, in manufacturing a semiconductor device. <P>SOLUTION: A chemical liquid for forming a water-shedding protective film at least on a recessed part surface of a metal system wafer, contains a surface active agent having a hydrophobic portion that has an HLB (Hydrophile Lipophile Balance) value of 0.001-10 by a Griffin method and that contains a hydrocarbon group with the carbon number of 6-18, and water. A concentration of the surface active agent in the chemical liquid is 0.00001 mass% or more based on the total amount 100 mass% of the chemical liquid, and equal to or less than the saturation concentration. <P>COPYRIGHT: (C)2012,JPO&INPIT |
