| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve both the electrode quality of a semiconductor wafer and the workability. <P>SOLUTION: The invention relates to an electroless plating treatment device 1 for forming an electrode by applying electroless plating treatment to a silicon wafer W in a treatment chamber 10A inside a light shielding housing 10. In the electroless plating device 1, the treatment chamber 10A includes a treatment chamber light 12 capable of emitting a visible light whose photoelectromotive force generated when the silicon wafer W is irradiated with the light is less than a predetermined value. <P>COPYRIGHT: (C)2012,JPO&INPIT |
