METHOD FOR MANUFACTURING PIEZOELECTRIC THIN FILM ELEMENT, PIEZOELECTRIC THIN FILM ELEMENT, AND MEMBER FOR PIEZOELECTRIC THIN FILM ELEMENT

摘要

The invention provides a method for manufacturing a piezoelectric thin film element having a piezoelectric thin film layer demonstrating excellent surface morphology and exceptional crystallinity. The method comprises the steps of: forming a lower electrode layer (2) on a substrate (1); forming a piezoelectric thin film buffer layer (3) on the lower electrode layer (2) at a relatively low deposition temperature; forming a piezoelectric thin film layer (4) on the piezoelectric thin film buffer layer (3) at a deposition temperature higher than the deposition temperature of the piezoelectric thin film buffer layer (3); and forming an upper electrode layer on the piezoelectric thin film layer (4).