发明名称 DEVICE AND METHOD FOR PRODUCING SILICON INGOT
摘要 <p>A device for producing a silicon ingot, comprising a bottomless cooling mold (1), a heating induction coil (2), and furthermore a plasma torch (3) as a heat source, and using electromagnetic induction heating and plasma heating in combination, wherein copper (Cu) is used as a plasma electrode (12) which is installed in the plasma torch. It is desirable that the plasma electrode is an anode and silicon (11) which is the object to be heated is a cathode, because consumption of the electrodes is kept to a minimum and the conversion efficiency when a solar battery is formed may be improved. The production method according to the present invention can be carried out easily by using this device. According to this device and method for producing a silicon ingot, by using electromagnetic induction heating and plasma heating in combination, a polycrystal silicon ingot which is used as a substrate material for a solar battery and which maintains a high conversion efficiency as a solar battery can be produced.</p>
申请公布号 WO2012020461(A1) 申请公布日期 2012.02.16
申请号 WO2010JP06740 申请日期 2010.11.17
申请人 SUMCO CORPORATION;NISHIOKA, KENICHI;YOSHIHARA, MITSUO;EBI, DAISUKE 发明人 NISHIOKA, KENICHI;YOSHIHARA, MITSUO;EBI, DAISUKE
分类号 C01B33/02 主分类号 C01B33/02
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