| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a two-dimensional photonic crystal laser without deteriorating performance of a two-dimensional photonic crystal layer as a resonator, in forming an upper layer on the two-dimensional photonic crystal layer by an epitaxial method. <P>SOLUTION: The method includes: a parent material layer preparation process to prepare a parent material layer 25 whose crystal structure is the same as that of Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>As(0.4≤x<1); a hole formation process to periodically form holes 251 in the parent material layer 25, where the holes should satisfy d≤200 nm and 1.3≤h/d≤5 with d the maximum width of the planar shape and h the depth; and an epitaxial layer preparation process to prepare a layer 26 of Al<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>As on the parent material layer 25 and the holes 251 by an epitaxial method. <P>COPYRIGHT: (C)2012,JPO&INPIT |
