| 摘要 |
<P>PROBLEM TO BE SOLVED: To make it possible to correct a halftone pattern of photomask with a low transmittance. <P>SOLUTION: A CVD film is formed at a correction part of a halftone pattern of photomask 2 using ultraviolet laser radiation which is output from a CVD processing laser oscillator 11 with setting a Q switch frequency within a range between 1 Hz and 1 kHz, and whose irradiation energy density per pulse is equivalent to or greater than 40 mJ per cm<SP POS="POST">2</SP>or whose irradiation power density is equal to or greater than 1 MW per cm<SP POS="POST">2</SP>, and using raw material gas made of chromium carbonyl gas. The present invention is, for example, applicable to a laser processing unit for correcting photomask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
