发明名称 Film formation apparatus and film formation method
摘要 There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed.
申请公布号 US2002108572(A1) 申请公布日期 2002.08.15
申请号 US20010033100 申请日期 2001.10.25
申请人 发明人 YAMAZAKI SHUNPEI;KONUMA TOSHIMITSU;NISHI TAKESHI
分类号 C23C14/24;C23C14/56;(IPC1-7):C23C16/00 主分类号 C23C14/24
代理机构 代理人
主权项
地址