发明名称 CAPACITIVE PRESSURE SENSOR AND METHOD FOR MANUFACTURING SAME
摘要 Provided is a capacitive pressure sensor which minimizes parasitic capacitance acting as noise in a non-hollow area during pressure detection so as to realize a micro-machined sensor, and a method for manufacturing same. The capacitive pressure sensor of the present invention includes a substrate functioning as a lower electrode, a first insulating film disposed on the substrate, a hollow disposed in the first insulating film, an opening communicating with the hollow, a second insulating film disposed on the first insulating film to cover the hollow, a sealing film formed of a conductive material so that the hollow and the opening are partially buried through the opening, and an upper electrode disposed on the second insulating film to be superimposed with the hollow. According to the present invention, after the hollow is formed, the conductive sealing film is formed in the shape of an anchor at both sides of the hollow, and the upper electrode electrically separated from the sealing film and superimposed with the hollow is formed so that a hollow area which substantially affects the pressure detection process is limited to a certain area by the sealing film, and the parasitic capacitance acting as the noise in the non-hollow area during the pressure detection process is minimized so as to realize the micro-machined sensor.
申请公布号 WO2012020930(A2) 申请公布日期 2012.02.16
申请号 WO2011KR05364 申请日期 2011.07.21
申请人 KOREA ELECTRONICS TECHNOLOGY INSTITUTE;HWANG, HAK-IN;LEE, DAE-SUNG;SHIN, KYU-SIK 发明人 HWANG, HAK-IN;LEE, DAE-SUNG;SHIN, KYU-SIK
分类号 G01L9/12;H01L29/84 主分类号 G01L9/12
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