发明名称 OPERATION SPEED CHANGEABLE NONVOLATILE MEMORY APPARATUS AND CONTROL METHOD OF COMPLEMENTARY SIGNAL THEREFOR
摘要 PURPOSE: A nonvolatile memory device with a variable operation speed and a complementary signal controlling method therefor are provided to minimize current consumption by controlling a disable timing of the complementary signal in an asynchronous mode operation. CONSTITUTION: A nonvolatile memory device operates at a first operation mode and a second operation mode. A controller(410) enables a complementary signal input and output buffer in response to an entry instruction to the first operation mode. The controller disables the complementary signal input and output buffer in response to a transition instruction to the second operation mode. A nonvolatile memory module(420) is used as a data storage area.
申请公布号 KR101113188(B1) 申请公布日期 2012.02.16
申请号 KR20100095078 申请日期 2010.09.30
申请人 HYNIX SEMICONDUCTOR INC. 发明人 OH, SEUNG MIN
分类号 G11C16/06;G11C16/32 主分类号 G11C16/06
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