发明名称 METHOD OF PRODUCING POWER STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a power storage device capable of enhancing discharge capacity, or provide a power storage device capable of suppressing deterioration of an electrode, which is caused by repeating charge and discharge. <P>SOLUTION: In a method of producing a power storage device, a crystalline silicon layer including a whisker group in which whiskers are dense is formed on a collector as an active material layer, by the low-pressure chemical vapor-phase growth method using a gas containing silicon as a material gas, and nitrogen or helium as a diluent gas. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012033472(A) 申请公布日期 2012.02.16
申请号 JP20110139632 申请日期 2011.06.23
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 FURUNO MAKOTO
分类号 H01M4/1395;H01G11/06;H01G11/22;H01G11/30;H01M4/64;H01M4/66 主分类号 H01M4/1395
代理机构 代理人
主权项
地址