| 摘要 |
A process and device are disclosed for depositing sequences of layers comprising a plurality of semiconductor components on a plurality of substrates (1), using a loading chamber (2) for loading a substrate carrier (1) with one or more substrates (1), a plurality of processing chambers (4.1, 4.2, 4.3, 4.4, 4.5), each comprising a gas inlet (5.1, 5.2, 5.3, 5.4, 5.5) for admitting process gases, a gas outlet (6.1, 6.2, 6.3, 6.4, 6.5), a closable loading and unloading opening (7, 8) for loading and unloading substrate carriers (3) carrying one or more substrates (1) into or out of the processing chamber (4.1), and a processing chamber heating system (8), as well as an unloading chamber (9) for unloading the substrate carrier (3) with one or more substrates (1), a conveyor (10.1, 10.2, 10.3, 10.4, 10.5 and 10.6) for conveying the substrate carrier (3) carrying one or more substrates (1) step by step from the loading chamber (2) into one of the first processing chambers (4.1, 4.2, 4.3, 4.4, 4.5), from there into a further processing chamber (4.2, 4.3, 4.4, 4.5) and then into the unloading chamber (9). In each processing chamber, a single layer is deposited and the processing chambers (4.1, 4.2, 4.3, 4.4, 4.5) are kept at the processing temperature (T) during an exchange of substrate carriers. |
