SUBSTRATE HEAT TREATMENT DEVICE, TEMPERATURE CONTROL METHOD FOR SUBSTRATE HEAT TREATMENT DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, TEMPERATURE CONTROL PROGRAM FOR SUBSTRATE HEAT TREATMENT DEVICE, AND RECORDING MEDIUM

摘要

Provided is a temperature control method capable of maintaining the same substrate quality even if substrates to be treated are continuously carried into a treatment container when being subjected to activation annealing by an electron bombardment heating method. A temperature control method for a substrate heat treatment device for annealing a substrate by an electron bombardment heating method comprises a step for performing preliminary heating in which before a substrate (21) is carried into an evacuatable container (3), the interior of a treatment chamber (2a) is heated to a higher temperature than the annealing temperature of the substrate (21) for a longer time than the annealing time, and then cooled to a temperature lower than the annealing temperature, and a step for carrying the substrate (21) into the evacuatable container (3) that has undergone the preliminary heating step, thereafter raising the temperature to the annealing temperature, and performing annealing.