| 摘要 |
<p>A light-emitting diode according to the present invention is characterized by comprising: an active layer having a quantum well structure obtained by alternately laminating a barrier layer and a well layer comprising a compound semiconductor represented by the compositional formula (AlX1Ga1-X1)As(0=X1=1); a light-emitting part having a first cladding layer and a second cladding layer that sandwich the active layer; a current-diffusing layer formed on the light-emitting part; and a functional substrate bonded to the current-diffusing layer, and is characterized in that the first and second cladding layers are formed from a compound semiconductor represented by the compositional formula (AlX2Ga1-X2)Y1In1-Y1P(0=X2=1, 0=Y1=1), and the number of pairs of the well layer and the barrier layer is 5 or less.</p> |
