METHOD FOR GROWING CRYSTAL AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for growing crystal which can control development of dislocation and cracks, and warpage of a substrate.

SOLUTION: The method for growing crystals of the group III nitride semiconductor includes steps of: heating a silicon substrate 100; and forming a concave structure 105 on a surface of the heated silicon substrate 100 by advance-feeding a gas containing at least TMA (trimethylaluminum).

COPYRIGHT: (C)2012,JPO&INPIT