| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film solar cell using a semiconductor thin film having a columnar crystal structure in which leakage current can be minimized, and to provide a semiconductor device having a columnar crystal structure in which degradation of performance due to leakage current can be minimized. <P>SOLUTION: A thin-film solar cell 10 has such a structure as n-type a-Si regions 131 and p-type a-Si regions 151 are arranged on a plane parallel with each layer, while spaced apart by a predetermined distance, so that they do not overlap on the opposite sides of a μc-Si layer 14. Since layers (first insulation layer 132 and second insulation layer 152) consisting of an insulation material, i.e. SiOx, are arranged at one or both ends of a grain boundary 30 formed between columnar crystals in the μc-Si layer 14, short circuit of an electric current via the grain boundary 30 can be prevented between the n-type a-Si regions 131 and p-type a-Si regions 151. <P>COPYRIGHT: (C)2012,JPO&INPIT |
