| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce on-state power loss of an IGBT while improving linearity of Vf-If characteristics of a FWD. <P>SOLUTION: Assuming that a thickness of an n<SP POS="POST">-</SP>-type drift layer is L1, a carrier diffusion coefficient in the n<SP POS="POST">-</SP>-type drift layer is D, carrier life time is τ, a first parameter defined based on structures of the IGBT and the FWD is k1, a second parameter defined based on a structure of a p-type deep well layer is k2, and a value (k1×VSB/VAK(th)) obtained by multiplying a ratio of snap-back voltage (VSB) to built-in potential (VAK(th)) between the p-type deep well layer and the n<SP POS="POST">-</SP>-type drift layer by the first parameter k1 is k, a distance W1, a distance W2, and a distance W3 are set so as to satisfy the following expressions: W3≥((k2×(Dτ)<SP POS="POST">1/2</SP>)<SP POS="POST">2</SP>-L1<SP POS="POST">2</SP>)^(1/2), W2≥L1/K<SP POS="POST">1/2</SP>and W1≤α/τ<SP POS="POST">1/2</SP>+β. <P>COPYRIGHT: (C)2012,JPO&INPIT |
