| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method having excellent adhesion between a barrier metal film and a copper film that is a metallic conductor film formed by a CVD method. <P>SOLUTION: The semiconductor device manufacturing method comprises the steps of: forming a barrier metal film directly on a substrate or on the substrate via an insulator film; and forming a copper film on the barrier metal film by a CVD method. The semiconductor device manufacturing method further comprises the steps of: exposing the barrier metal film under a heating condition to a first reductive gas including at least one of ammonia, hydrogen, and silane between the step of forming the barrier metal film and the step of forming the copper film; and exposing the copper film under a heating condition to a second reductive gas after the step of forming the copper film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
