发明名称 |
POWER SOURCE VOLTAGE CONTROL CIRCUIT AND CONTROL METHOD FOR SUB-THRESHOLD SRAM |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a circuit and a method for improving the writing operation stability of an SRAM operating in a sub-threshold region. <P>SOLUTION: A power source voltage control circuit supplies a control output voltage as a power source voltage to a sub-threshold SRAM which operates in a sub-threshold region with a predetermined delay time and in which an absolute value of a difference between a threshold voltage at a typical value of a pMOSFET and a threshold voltage at a typical value of an nMOSFET is 0.1 V or more. The power source voltage control circuit comprises a microcurrent generating circuit for generating predetermined microcurrent based on the power source voltage, and a control output voltage generating circuit for generating a control output voltage including a change in threshold voltage of the pMOSFET or the nMOSFET for correcting the variation in delay time based on the generated microcurrent and supplying it as the controlled power source voltage to the sub-threshold SRAM. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012033235(A) |
申请公布日期 |
2012.02.16 |
申请号 |
JP20100172606 |
申请日期 |
2010.07.30 |
申请人 |
HANDOTAI RIKOUGAKU KENKYU CENTER:KK |
发明人 |
HIROSE TETSUYA;MATSUMOTO KEI;OSAKI YUJI |
分类号 |
G11C11/413;H01L21/8244;H01L27/10;H01L27/11 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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