发明名称 |
Silicone Carbide Trench Semiconductor Device |
摘要 |
A semiconductor device as described herein includes a silicon carbide semiconductor body. A trench extends into the silicon carbide semiconductor body at a first surface. A gate dielectric and a gate electrode are formed within the trench. A body zone of a first conductivity type adjoins to a sidewall of the trench, the body zone being electrically coupled to a contact via a body contact zone including a higher maximum concentration of dopants than the body zone. An extension zone of the first conductivity type is electrically coupled to the contact via the body zone, wherein a maximum concentration of dopants of the extension zone along a vertical direction perpendicular to the first surface is higher than the maximum concentration of dopants of the body zone along the vertical direction. A distance between the first surface and a bottom side of the extension zone is larger than the distance between the first surface and the bottom side of the trench. |
申请公布号 |
US2012037920(A1) |
申请公布日期 |
2012.02.16 |
申请号 |
US20100854974 |
申请日期 |
2010.08.12 |
申请人 |
TREU MICHAEL;SIEMIENIEC RALF;INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
TREU MICHAEL;SIEMIENIEC RALF |
分类号 |
H01L29/24 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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