发明名称 |
THREE-DIMENSIONAL ARRAY OF RE-PROGRAMMABLE NON-VOLATILE MEMORY ELEMENTS HAVING VERTICAL BIT LINES |
摘要 |
<p>A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.</p> |
申请公布号 |
KR20120014136(A) |
申请公布日期 |
2012.02.16 |
申请号 |
KR20117026206 |
申请日期 |
2010.04.02 |
申请人 |
SANDISK 3D LLC |
发明人 |
SAMACHISA GEORGE |
分类号 |
G11C16/02;G11C16/06;H01L21/8247;H01L27/115 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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