LASER IRRADIATION METHOD AND METHOD OF FORMING CRYSTALLINE SEMICONDUCTOR FILM

摘要

PROBLEM TO BE SOLVED: To solve the problems that the nonuniformity of energy given in an irradiation object plane still appears (in laser irradiation), even if the laser irradiation is conducted in the same condition after the energy distribution of a beam spot itself is properly shaped, and crystallinity in a crystalline semiconductor film becomes ununiformed to cause the variation of the characteristic of a semiconductor element made by the use of this film, if a semiconductor film is crystallized to form the crystalline semiconductor film with such irradiation energy left ununiformed. SOLUTION: For the irradiation of an irradiation object laid or formed on a substrate with a laser beam which has an extremely short pulse having a pulsewidth of some psec (10-12sec) or shorter. COPYRIGHT: (C)2005,JPO&NCIPI