| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a solid-state imaging device which can suppress a crosstalk phenomenon. SOLUTION: The solid-state imaging device comprises a semiconductor substrate, a plurality of photo detectors for generating signal charge in accordance with incident light each of which is formed in each pixel on the light receiving face side of the semiconductor substrate, a reading-out circuit which outputs image signals based on the signal charges generated by the plurality of photo detectors, and a shading film which is arranged on the light receiving face side and has an opening in an incident light path of the photo detector. At least some of the photo detectors satisfy following conditions about their semiconductor surfaces: (1) semiconductor surfaces of these photo detectors are formed in mesa shapes protruding above those near the photo detectors, and (2) top faces of the mesas reach such a height that blocks inclined incident light which gets under the shading film and generates noise in the image signal. COPYRIGHT: (C)2005,JPO&NCIPI
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