| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which foreign matters remaining on a surface after CMP can be effectively removed. SOLUTION: A substrate is provided with an insulating surface, and a recessed part is formed on the insulating surface. A conductive film is formed on the surface of the insulating surface so that the recessed part may be filled with the conductive film. The surface of the substrate is subjected to chemical mechanical polishing so that the insulating surface of the substrate may be exposed and the conductive film be partly left in the recessed part. The surface of the substrate wherein the conductive film in the recessed part and the insulating surface are exposed is dipped in a first liquid. The first liquid is a solution containing at least one first substance selected from a first group of benzotriazol, a derivative of benzotriazol and a surfactant, or water. A second liquid is a solution containing the first substance with higher concentration than that of the first liquid. COPYRIGHT: (C)2005,JPO&NCIPI
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