| 摘要 |
A Group-III nitride semiconductor device including a crystal substrate, an electrically conducting Group-III nitride semiconductor (Al<SUB>X</SUB>Ga<SUB>Y</SUB>In<SUB>1-(X+Y)</SUB>N: 0<=X<1, 0<Y<=1 and 0<X+Y<=1) crystal layer vapor-phase grown on the crystal substrate, an ohmic electrode and an electrically conducting boron phosphide crystal layer provided between the ohmic electrode and the Group-III nitride semiconductor crystal layer, the ohmic electrode being disposed in contact with the boron phosphide crystal layer. Also disclosed is a method for producing the Group-III nitride semiconductor device, and a light-emitting diode including the Group-III nitride semiconductor device.
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