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发明名称
TRANSISTOR-GATE-ELEKTRODE MIT LEITMATERIALSCHICHT
摘要
申请公布号
AT543217(T)
申请公布日期
2012.02.15
申请号
AT20090012031T
申请日期
2004.12.22
申请人
INTEL CORPORATION
发明人
MURPHY, ANAND;BOYANOV, BOYAN;DATTA, SUMAN;DOYLE, BRIAN;JIN, BEEN-YIH;YU, SHAOFENG;CHAU, ROBERT
分类号
H01L29/10;H01L21/28;H01L21/8234;H01L21/8238;H01L29/49
主分类号
H01L29/10
代理机构
代理人
主权项
地址
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