发明名称 SEMICONDUCTOR APPARATUS AND ITS FABRICATION PROCESS
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor apparatus in which oxidation of fine particles functioning as quantum dot object is suppressed surely. SOLUTION: The semiconductor apparatus 20 comprises a semiconductor substrate 1, a tunnel insulating film 3 provided on the semiconductor substrate 1, fine particles 4 of an oxide semiconductor having nonincreasing oxidation number arranged at an interval on the tunnel insulating film 3, an insulating film 5 of SiO<SB>2</SB>provided on the tunnel insulating film 3 to bury the fine particles 4, and a control gate 6 provided on the insulating film 5. Since the fine particles 4 functioning as quantum dots are not oxidized during or after fabrication process to become an insulator, the semiconductor apparatus is fabricated with good yield while enhancing the reliability. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006269660(A) 申请公布日期 2006.10.05
申请号 JP20050084382 申请日期 2005.03.23
申请人 NARA INSTITUTE OF SCIENCE & TECHNOLOGY;MATSUSHITA ELECTRIC IND CO LTD 发明人 FUYUKI TAKASHI;URAOKA YUKIHARU;YAMASHITA ICHIRO
分类号 H01L21/8247;B82B3/00;H01L27/115;H01L29/06;H01L29/788;H01L29/792 主分类号 H01L21/8247
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