| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method for accelerating a film formation speed of a Cu film and a method for forming the Cu film using the substrate treatment method. SOLUTION: A wafer W with an Ru film formed on its surface, for example, is heated to preferentially orient a (001) face or (002) face with orientation of small lattice mismatching with Cu on a surface of the Ru film (step 3). A Cu film is then formed on the Ru film by thermal CVD, for example, or the like (step 4). In step 4, the film formation speed of the Cu film can be accelerated dependently upon crystallinity on the surface of the Ru film. COPYRIGHT: (C)2007,JPO&INPIT |
