Flash memory device and read method thereof

摘要

PURPOSE: A flash memory device and a method for reading the same are provided to control a read voltage according to flag cell data. CONSTITUTION: Data of flag cells of WLk and WLk+1 are read(S31). It is determined whether WLk is a finally written word line according to the data of the read flag cells(S32). If the WLk is not the finally written word line, the memory cells of the WLk is read according to a first read voltage set(S33). If the WLk is the finally written word line, the memory cells of the WLk is read according to a second read voltage set(S34).