Heterojunction Bipolar Transistor and Manufacturing Method

摘要

Disclosed is a method of manufacturing a heterojunction bipolar transistor (HBT), comprising providing a substrate (10) comprising an active region (14) bordered by shallow trench insulation regions (12); depositing a stack of a dielectric layer (20) and a polysilicon layer (18) over the substrate; forming a base window (16) in said stack, said base window extending over the active region and part of the shallow trench insulation regions, said base window comprising a trench extending vertically between the active region and one of said shallow trench insulation regions; growing an epitaxial base material (16', 16") inside the base window; forming a spacer (22) on the exposed side walls of the base material; and filling the base window with an emitter material (24). A HBT manufactured in this manner and an IC including such a HBT are also disclosed.