PHASE CHANGE MEMORY USING CARBON NANO TUBE AND METHOD FOR FABRICATING THEREOF

摘要

A phase shift memory device and a manufacturing method thereof are provided to keep a large current density regardless of a small operation current and to improve a threshold voltage margin by forming a lower electrode using a carbon nano tube. A phase shift memory device includes a current source electrode(201) for supplying an external current, a phase changeable material layer(207) opposite to the current source electrode, a carbon nano tube electrode structure, and an insulator. The carbon nano tube electrode structure(203) is arranged between the current source electrode and the phase changeable material layer. The insulator(205) is formed at an outer portion of the carbon nano tube electrode structure in order to restrain the heat of the carbon nano tube electrode structure from being transmitted to the outside.