A COMPOSITION COMPRISING OZONIZED WATER FOR STRIPPING PHOTORESIST, AND A METHOD OF FORMING PATTERN OF SUBSTRATE USING THE COMPOSITION

摘要

A composition for stripping photoresist containing ozonized water is provided to be used to efficiently remove photoresist patterns and form patterns on a substrate suitable for specific semiconductor device by comprising the ozonized water which is generated by dissolving ozone in deionized water. The photoresist stripping composition includes ozonized water prepared by dissolving ozone in de-ionized water. The amount of the ozonized water ranges from 0.5 to 25wt.% to total weight of the composition. The composition is used to form patterns on a substrate(100) by a process comprising steps of: forming a photoresist pattern(120) on the substrate; etching the substrate by using the photoresist pattern as an etching mask; and removing the photoresist pattern with the composition containing the ozonized water. The process further includes a step of removing the photoresist pattern with an alkaline solution containing ammonia and hydrogen peroxide.