| 摘要 |
<p>The present invention relates to a power core (600) comprising: at least one embedded surface mount technology (SMT) discrete chip capacitor layer comprising at least one embedded SMT discrete chip capacitor (410); and at least one planar capacitor laminate (340); wherein at least one planar capacitor laminate (340) serves as a low inductance path to supply a charge to at least one embedded SMT discrete chip capacitor (410); and wherein said embedded SMT discrete chip capacitor is connected in parallel to said planar capacitor laminate.</p> |
